Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor
نویسندگان
چکیده
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording currentvoltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
منابع مشابه
Electrical Characterization of Resistive Switching Memories
Metal oxide based resistive switching memories, also known as resistive-RAM (RRAM), have shown promising characteristics for next-generation nonvolatile memory and reconfigurable logic applications. These devices can be electrically switched between a low-resistance-state (LRS) and high-resistance-state (HRS) over many cycles. Fig. 1(a) illustrates the resistive switching terminologies and the ...
متن کاملDesign and CAD for RRAM-based FPGA
Nowadays, Resistive Random Access Memories (RRAMs) are one of the most promising candidates in NonVolatile Memory (NVM) family. RRAMs are two-node devices and can be configured into two stable resistance states, either Low Resistance State (LRS) or High Resistance State (HRS). Compared to Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) not only suffer la...
متن کاملEmerging memories: resistive switching mechanisms and current status.
The resistance switching behaviour of several materials has recently attracted considerable attention for its application in non-volatile memory (NVM) devices, popularly described as resistive random access memories (RRAMs). RRAM is a type of NVM that uses a material(s) that changes the resistance when a voltage is applied. Resistive switching phenomena have been observed in many oxides: (i) bi...
متن کاملResistive Random Access Memories (RRAMs) Based on Metal Nanoparticles
It is demonstrated that planar structures based on silver nanoparticles hosted in a polymer matrix show reliable and reproducible switching properties attractive for nonvolatile memory applications. These systems can be programmed between a low conductance (off-state) and high conductance (on-state) with an on/off ratio of 3 orders of magnitude, large retention times and good cycle endurance. T...
متن کاملAdvanced Physical Modeling of SiOx Resistive Random Access Memories
We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects a...
متن کامل